| PART |
Description |
Maker |
| BFC61 |
4TH GENERATION MOSFET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation
High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
|
| SML1004R2GXN |
4TH GENERATION MOSFET N?CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS
|
Seme LAB
|
| DPX-S435-15 |
4th Generation Intel? Core?Gaming platform
|
Advantech Co., Ltd.
|
| C-BUNDLE-ARK1550-1 |
15 Intel 4th Generation Core i5 Modular Fanless Panel PC
|
Advantech Co., Ltd.
|
| GT60J322 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications
|
TOSHIBA
|
| PS22054 |
1200V/15A low-loss 4th generation IGBT inverter bridge for 3 phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS22056 PS2205612 |
Dual-In-Line Package Intelligent Power Module
1200V/25A low-loss 4th generation IGBT inverter bridge
|
Mitsubishi Electric Semiconductor
|
| PS21353-N |
DIP - IPM
600V/10A low-loss 4th generation (planar) IGBT inverter bridge for 3 phase DC-to-AC power conversion.
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
